| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method or the like for suppressing occurrence of bowing and undercut in a side wall part of an organic film and obtaining a sufficient etching shape at the time of plasma-etching the organic film through a mask consisting of a silicon-containing film, which is formed at an upper layer. SOLUTION: The organic film 102 is plasma-etched with a patterned SiON film 103 as a mask, and an opening 108 is formed. Process gas consisting of gas mixture including oxygen (O)-containing gas, noble gas and fluorocarbon gas (CF system gas) is used for plasma etching the organic film 102. COPYRIGHT: (C)2008,JPO&INPIT
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