发明名称 INSULATING FILM FOR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an interlayer insulating film which has a low dielectric constant used as the interlayer insulating film of an electronic device, and the like, and has superior mechanical strength, and further, has proper stability with the passage of time, and provide an interlayer insulating film for an electronic device whereto the insulating film is applied in the state of a coating liquid, and to provide an electronic device which has the insulating film as a layer-constituting layer. SOLUTION: The insulating film for semiconductor integrated circuit is one which contains the high-molecular compound, having as its structural unit the radical represented by formula (1): -R<SB>1</SB>-C≡C-C≡C-, where R<SB>1</SB>represents the squirrel-cage type structural radical. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008192879(A) 申请公布日期 2008.08.21
申请号 JP20070026547 申请日期 2007.02.06
申请人 FUJIFILM CORP 发明人 WATANABE YASUSHI;WATANABE KATSUYUKI
分类号 H01L21/312;C08G61/04;H01L21/768 主分类号 H01L21/312
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