| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device providing a high storage capacity, and also to provide its manufacturing method. SOLUTION: The semiconductor device includes, on a substrate 10: a lamination layer structure 17 where a plurality of channel layers 14a, 14b, vertically held by bit line layers 15a, 15b, 15c, is laminated; a gate electrode 30 which is arranged on the side of a groove 18 formed in the channel layers 14a, 14b of the lamination layer structure 17; and a charge storage layer 24 arranged between the gate electrode 30 and the channel layers 14a, 14b. COPYRIGHT: (C)2008,JPO&INPIT
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