| 摘要 |
PROBLEM TO BE SOLVED: To prevent an increase in particles on a substrate to be inspected, after subjecting the substrate to inspection process at a low temperature of 0°C or lower. SOLUTION: An inspection method is carried out to subject a wafer W to be inspected to a prescribed inspection process in a processing chamber 202 and then measure particles on the inspection substrate, to inspect the status of the inside of the processing chamber. When the wafer W having undergone the process in the processing chamber is sent back to a transfer chamber 130 via a load lock chamber 150, the wafer W is kept in the load lock chamber for a prescribed time, as a dry inert gas is introduced into the load lock chamber, and then is sent to the transfer chamber. This prescribed time is determined as being the time in which increase in particles on the wafer W can be limited so as to be at least within a permissible range. COPYRIGHT: (C)2008,JPO&INPIT
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