发明名称 MULTI-LAYERED SILICON NANOTUBE AND ITS FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a forming method of a multi-layered silicon nanotube having a structure based on two-dimensional structure, and the multi-layered silicon nanotube formed by the forming method. SOLUTION: The multi-layered silicon nanotube, which comprises a pseudo-two-dimensional sheet having silicon element as a main component, which is constituted by concentrically superposing several silicon layers having cylindrical shapes different in diameter, and in which the interlayer distance of the silicon layers is 0.36±0.02 nm, is formed by placing a silicon target 4 in a chamber 1, and convergently irradiating the surface of the silicon target 4 with a laser light 11. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008189496(A) 申请公布日期 2008.08.21
申请号 JP20070024606 申请日期 2007.02.02
申请人 FUJIKI HIDEO 发明人 FUJIKI HIDEO;YAMADA SUSUMU
分类号 C01B33/02;B82B1/00;B82B3/00 主分类号 C01B33/02
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