发明名称 Crucible for the Crystallization of Silicon
摘要 A crucible and method for the crystallization of silicon utilize release coatings. The crucible is used in the handling of molten materials that are solidified in the crucible and then removed as ingots. The crucible does not require the preparation of a very thick coating at the end user facilities, is faster and cheaper to produce, presents an improved release effect and allows the production of silicon ingot without cracks. The crucible includes a base body, a substrate layer containing silicon nitride, an intermediate layer containing silica, and a surface layer containing silicon nitride, silicon dioxide and silicon.
申请公布号 US2008196656(A1) 申请公布日期 2008.08.21
申请号 US20060994151 申请日期 2006.06.30
申请人 VESUVIUS CRUCIBLE COMPANY ("VESUVIUS") 发明人 RANCOULE GILBERT
分类号 C30B35/00;B05D1/36;B05D3/00 主分类号 C30B35/00
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