发明名称 |
Semiconductor component comprising a drift zone and a drift control zone |
摘要 |
A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.
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申请公布号 |
US2008197380(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20070706860 |
申请日期 |
2007.02.15 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SEDLMAIER STEFAN;MAUDER ANTON;WILLMEROTH ARMIN;HIRLER FRANZ |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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