发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 A thin film transistor (TFT) substrate and a method of manufacturing the same in which the surface of a data pattern is implanted with ions to increase the adhesion force with a passivation layer formed by a subsequent process. The TFT substrate includes: an active layer having a channel region formed of a semiconductor and source and drain regions doped with impurities; a data pattern formed on the active layer and including source and drain electrodes, the surface of which is implanted with ions to increase hydrophobicity and roughness; a passivation layer formed on the data pattern and including a pixel contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode through the pixel contact hole, and a method of manufacturing the same.
申请公布号 US2008197356(A1) 申请公布日期 2008.08.21
申请号 US20080021079 申请日期 2008.01.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM DEOK-HOI;YI CHUNG
分类号 H01L27/12;H01L21/336;H01L21/84 主分类号 H01L27/12
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