发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A thin film transistor (TFT) substrate and a method of manufacturing the same in which the surface of a data pattern is implanted with ions to increase the adhesion force with a passivation layer formed by a subsequent process. The TFT substrate includes: an active layer having a channel region formed of a semiconductor and source and drain regions doped with impurities; a data pattern formed on the active layer and including source and drain electrodes, the surface of which is implanted with ions to increase hydrophobicity and roughness; a passivation layer formed on the data pattern and including a pixel contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode through the pixel contact hole, and a method of manufacturing the same.
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申请公布号 |
US2008197356(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20080021079 |
申请日期 |
2008.01.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DEOK-HOI;YI CHUNG |
分类号 |
H01L27/12;H01L21/336;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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