发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND HIGH-FREQUENCY POWER AMPLIFIER MODULE
摘要 Upon application of an on-state voltage to a control terminal, an antenna switch provided between an antenna terminal and a transmission terminal is turned on, and a transmission signal of a PCS/DCS system passes from the transmission terminal through the antenna terminal. At this time, a booster circuit, to which a part of the transmission signal is supplied, generates at an output terminal a boost voltage higher than a control voltage output from a controller due to the rectification of diodes, and applies the same to the gate of a transistor circuit of the antenna switch. Since in the booster circuit a resistor is coupled to the output terminal, the passage through resistors of an input transmission power in an RF signal path is only the passage through one resistor, thus reducing the attenuation of the transmission signal and providing an excellent insertion loss characteristic.
申请公布号 US2008197923(A1) 申请公布日期 2008.08.21
申请号 US20070960242 申请日期 2007.12.19
申请人 NAKAJIMA AKISHIGE;SHIGENO YASUSHI;ISHIKAWA TOMOYUKI 发明人 NAKAJIMA AKISHIGE;SHIGENO YASUSHI;ISHIKAWA TOMOYUKI
分类号 H03F1/32 主分类号 H03F1/32
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