发明名称 |
NONVOLATILE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME |
摘要 |
A method of manufacturing a nonvolatile memory device is provided. The method includes forming an isolation layer in a semiconductor substrate defining an active region and forming a molding pattern on the isolation layer. A first conductive layer is formed on a sidewall and a top surface of the molding pattern and on the semiconductor substrate. The first conductive layer on the top surface of the molding pattern is selectively removed forming a conductive pattern. The conductive pattern includes a body plate disposed on the active region and a protrusion which extends from an edge of the body plate onto the sidewall of the molding pattern. The molding pattern is then removed. An inter-gate dielectric layer is formed on the isolation layer and the conductive pattern. Nonvolatile memory devices manufactured using the method are also provided.
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申请公布号 |
US2008197401(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20080026812 |
申请日期 |
2008.02.06 |
申请人 |
HONG EUN-MI;KIM KWANG-TAE;PARK JI-HOON |
发明人 |
HONG EUN-MI;KIM KWANG-TAE;PARK JI-HOON |
分类号 |
H01L27/105;H01L21/28 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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地址 |
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