发明名称 |
Methods of forming semiconductor devices |
摘要 |
A method of forming a semiconductor device includes: forming a pattern having trenches on a semiconductor substrate; forming a semiconductor layer on the semiconductor device that fills the trenches; planarizing the semiconductor layer using a first planarization process without exposing the pattern; performing an epitaxy growth process on the first planarized semiconductor layer to form a crystalline semiconductor layer; and planarizing the crystalline semiconductor layer until the pattern is exposed to form a crystalline semiconductor pattern.
|
申请公布号 |
US2008200007(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20080070220 |
申请日期 |
2008.02.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM JONG-HEUN;HONG CHANG-KI;YOON BO-UN;YUN SEONG-KYU;CHOI SUK-HUN;HAN SANG-YEOB |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|