SEMICONDUCTOR POWER CONVERSION DEVICE

摘要

A surge voltage target setting unit (103) acquires a main circuit power source voltage (VH) of a semiconductor power conversion device, on the basis of the inter-terminal voltage (Vce) of a semiconductor switching element (100) detected by a voltage detecting unit (102), and sets the control target (Vm) of a surge voltage in accordance with the main circuit power source voltage acquired. When the inter-terminal voltage (Vce) exceeds the control target (Vm) at the turn-off time of the semiconductor switching element (100), an active gate control unit (71) sets a voltage correction quantity (V1), on the basis of the feedback of the inter-terminal voltage (Vce), so that the gate voltage (Vg) is corrected in a direction to raise a gate voltage (Vg), i.e., in a direction to reduce a turn-off rate.