| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that includes an Ni-FUSI/SiON or High-k gate insulating film structure that is easily manufactured and a CMIS having a low threshold voltage Vth, and to provide a manufacturing method for the semiconductor device. SOLUTION: The manufacturing method for the semiconductor device includes a step of forming a p-type semiconductor region 2 and an n-type semiconductor region 3 insulated and isolated from each other in a substrate 1; a step of forming a first gate insulating film 5 and a second gate insulating film 15 on the p-type semiconductor region 2 and the n-type semiconductor region 3, respectively, a step of forming a first nickel silicide 6b, having a composition of Ni/Si<31/12 on the first gate insulating film 5 and forming a second nickel silicide 16, having a composition of Ni/Si≥31/12 on the second gate insulating film 15; and a step of diffusing an aluminum into the first nickel silicide 6b to segregationally deposit an aluminum 6a at the interface between the first nickel silicide 6b and the first gate insulating film 5. COPYRIGHT: (C)2008,JPO&INPIT
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