| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method capable of utilizing an ALD (Atomic Layer Deposition) process at high productivity without using a high speed switch valve, and capable of cleaning in a chamber. SOLUTION: The film forming apparatus comprises: a chamber 11 storing a substrate W; a substrate holding member 12 holding a plurality of substrates W within the chamber 11 in a plane; first process gas discharge nozzles 20 provided in the chamber 11 and discharging TiCl<SB>4</SB>; second process gas discharge nozzles 21 provided in the chamber 11 and discharging NH<SB>3</SB>; cleaning gas discharge means 31, 35, 46, 47, 48 discharging cleaning gas into the chamber 11; a rotary mechanism 14 rotating the substrate holding member 12; and a heater 16 heating the substrate W, and while rotating the substrate holding member 12, monoatomic layers of Ti and monoatomic layers of N are alternately formed on the substrate W, and the inside of the chamber is cleaned by the cleaning gas. COPYRIGHT: (C)2008,JPO&INPIT |
