| 摘要 |
Disclosed herein is a method for manufacturing an insulated gate field effect transistor, the method including the steps of: (a) preparing a base that includes source/drain regions, a channel forming region, a gate insulating film formed on the channel forming region, an insulating layer covering the source/drain regions, and a gate electrode formation opening provided in a partial portion of the insulating layer above the channel forming region; (b) forming a gate electrode by burying a conductive material layer in the gate electrode formation opening; (c) removing the insulating layer; and (d) depositing a first interlayer insulating layer and a second interlayer insulating layer sequentially across an entire surface, wherein in the step (d), the first interlayer insulating layer is deposited in a deposition atmosphere containing no oxygen atom.
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