| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a solid imaging element that is increased in the sensitivity for long-wavelength components and for reducing crosstalks. SOLUTION: This solid-state imaging element is provided with each pixel 4 having: a P-type epitaxial growth layer 51; a P-type well 52 arranged on that; and an N-type charge accumulation part 53 arranged on the well 52 for accumulating photoelectrically converted charge. A first substrate, having the well 52 on one main surface side, is prepared for manufacturing this element. Then, an upper region 53a of the charge accumulating part 53 is formed in the well 52 by injecting ion from the side of the well 52. Thereafter, a second substrate 82 is bonded to the side of the well 52 of the first substrate, and the side of the first substrate is removed, and the overall thickness of the junction body is made thin. Then, the lower-side region of the charge accumulation part 53 is formed in the well 52, by injecting ion from the opposite side of the substrate 82 of the junction body. Then, a layer 51 is formed at the opposite side of the substrate 82 of the junction body, and then the substrate 82 is removed. COPYRIGHT: (C)2008,JPO&INPIT
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