| 摘要 |
PROBLEM TO BE SOLVED: To prevent the leakage current occurring between a substrate and a semiconductor layer in a semiconductor device made of a III-V nitride semiconductor and having a via hole structure; and to allow the semiconductor device to have high frequency characteristics, high output characteristics, and high power characteristics by facilitating via hole formation of the semiconductor device. SOLUTION: The semiconductor device comprises: a buffer layer 12 which is formed on a conductive substrate 11 and is made of an Al<SB>x</SB>Ga<SB>1-x</SB>N with a high resistance; an element formation layer 14 which is formed on the buffer layer 12, has a channel layer, and is made of undoped GaN and an N-type Al<SB>y</SB>Ga<SB>1-y</SB>N; and a source electrode 16, a drain electrode 17, and a gate electrode 15 which are selectively formed on the element formation layer 14 respectively. The source electrode 16 is connected to the conductive substrate 11 by being filled into a via hole 12a formed in the buffer layer 12 and the element formation layer 14. COPYRIGHT: (C)2008,JPO&INPIT
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