| 摘要 |
PROBLEM TO BE SOLVED: To prevent the increase of the junction leak resulting from the excess of the reaction between a source region and silicide caused by the formation of a local source line. SOLUTION: A gate electrodes GM are formed on a silicon substrate 1 via a gate insulating film 4, and a source region S and a drain region D are provided between the gate electrodes GM. By forming polycrystalline silicon layer 12 on the source region S, when the local source line LS is formed by forming a titanium film and a tungsten film, silicide is prevented from proceeding into the source regions. COPYRIGHT: (C)2008,JPO&INPIT
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