| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having such a structure that allows for direct measurement of electric characteristics such as a contact resistance and the insulating property of a current blocking layer, and also to provide an evaluation method for these electric characteristics and a method of manufacturing such a semiconductor laser. SOLUTION: The semiconductor laser has such a structure that a first conductivity type clad layer, an active layer, a second conductivity type clad layer a part of which forms a ridge structure, and the current blocking layer are stacked on a substrate. In the semiconductor laser, a plurality of electrodes electrically separated from each other are formed on the current blocking layer in such a manner as to get across the ridge structure. COPYRIGHT: (C)2008,JPO&INPIT
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