| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for supporting the design of magnetron sputtering, a device therefor and a program, capable of calculating and estimating an erosion distribution of a target and a film deposition distribution of a wafer in a short time only from a magnetic field structure enclosing plasma. SOLUTION: The design of magnetron sputtering where magnetic fields are formed on the surface side of a target by rotating magnets 68 arranged at the back face side of a target 70 to enclose plasma 73, is supported. A static magnetic field structural model is read out, so as to designate a cross-section where plasma is generated in parallel to the surface of the target, at an optional position, and in the designated cross-section, an erosion central line segment with an endless shape passing through the center of a region at which a magnetic field vertical to the face is made zero is calculated. The method for calculating a stationary erosion rate distribution in the designated cross-section in the magnetic field structural model based on the erosion rate of the erosion central line segment, a rotary erosion rate distribution accompanying the rotation of the magnets, and further, a film deposition rate distribution on an object using the rotary erosion rate distribution, is disclosed. COPYRIGHT: (C)2008,JPO&INPIT
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