| 摘要 |
In an integrated pressure sensor with a high full-scale value, a monolithic body of semiconductor material has a first and a second main surface, opposite and separated by a substantially uniform distance. The monolithic body has a bulk region, having a sensitive portion next to the first main surface, upon which pressure acts. A first piezoresistive detection element is integrated in the sensitive portion and has a variable resistance as a function of the pressure. The bulk region is a solid and compact region and has a thickness substantially equal to the distance.
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