| 摘要 |
A voltage detection circuit has a first MOSFET device having a drain, a gate, and a source terminal. A feedback element is coupled to the drain terminal and the gate terminal of the first MOSFET device. An input voltage is coupled to the gate terminal of the first MOSFET device. The voltage detection circuit is actively detecting a voltage from when the input voltage is in an OFF-state voltage region of the first MOSFET device. This detection continues through when the input voltage is at a sub-threshold voltage region of the first MOSFET, to when the input voltage exceeds the threshold voltage of the first MOSFET. This voltage detection circuit dissipates only a pre-selected drain-current at a level exceeding the drain-leakage current of the first MOSFET, as power dissipation.
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