发明名称 INTERCONNECTION SUBSTRATE AND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF INTERCONNECTION SUBSTRATE
摘要 An interconnection substrate including therein one or more resin layers, each of the resin layers including therein a via-hole penetrating from a top surface to a bottom surface of the resin layer. A via-plug of metal particles is formed in the via-hole. Each of the metal particles has a flat shape generally parallel to a plane of the resin layer.
申请公布号 US2008197501(A1) 申请公布日期 2008.08.21
申请号 US20080968341 申请日期 2008.01.02
申请人 FUJITSU LIMITED 发明人 IMANAKA YOSHIHIKO
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
代理机构 代理人
主权项
地址