发明名称 |
HAFNIUM COMPOUND, HAFNIUM THIN FILM-FORMING MATERIAL AND METHOD FOR FORMING HAFNIUM THIN FILM |
摘要 |
A novel hafnium-based compound is provided to be a liquid at room temperature and show high stability, thereby forming a high quality hafnium-based thin film with stability. A hafnium thin film forming material is a hafnium-based compound represented by a formula(1) of LHf(NR^1R^2)3, wherein L is cyclopentadienyl group or substituted cyclopentadienyl group, and each R^1 and R^2 is alkyl, provided that R^1 and R^2 may be the same or different from each other. To form a hafnium thin film through a chemical vapor phase growth technique or an atomic layer controlled growth technique, the hafnium-based compound is used.
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申请公布号 |
KR20080077086(A) |
申请公布日期 |
2008.08.21 |
申请号 |
KR20087008011 |
申请日期 |
2006.11.29 |
申请人 |
TRI CHEMICAL LABORATORIES INC.;TECHNO SEMICHEM CO., LTD. |
发明人 |
HIRAKI TADAAKI;MIHASHI SATORU;TAZUKE KIYOSHI;TUBAKITANI AKIHITO;KIM, BYUNG SOO;YOO, SEUNG HO |
分类号 |
C07F7/00;C23C16/18 |
主分类号 |
C07F7/00 |
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