| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device adapted to decrease an ON resistance of a power MOSFET or IGBT switching device. <P>SOLUTION: A MOSFET has an n+ region 102 of a source diffusion layer in a surface of a p-type semiconductor substrate 101, an n+ region 103 of a drain diffusion layer, and a gate insulating film 106 and a transparent gate electrode 107. In the MOSFET, a channel resistance is decreased by irradiating a channel region of the substrate with light from a light source such as an LED etc. through the transparent gate electrode 107 and the gate insulating film 106. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
