| 摘要 |
PROBLEM TO BE SOLVED: To precisely measure non-destructively and non-contactingly an index value in a short time, which is for evaluating the crystallinity of an extremely micro area in a thin film sample comprising a semiconductor such as polysilicon. SOLUTION: A sample block 10 of a conductive member is arranged on a side opposite to a side irradiated with a microwave onto the thin film sample 20a of the semiconductor such as the polysilicon, is held, by a substrate holding part 12 of a conductor such as glass and a ceramic, to bring a distance between a surface of the sample block 10 and a measuring portion of the thin film sample 20a into a distance of 1/4 of wavelength of the microwave, or a distance added with an integer times of the wavelength of the microwave thereto, the microwaves Op1, Op2 are emitted under this condition respectively to the measuring portion of the thin film sample 20a and the vicinity thereof, through two waveguides 5a, 5b connected to a magic T, and a peak value Sp of intensity in a difference signal Rt1 between reflected waves of the microwaves is detected by a mixer 6 and a signal processor 7. COPYRIGHT: (C)2008,JPO&INPIT
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