发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device includes a p-type active region and an n-type active region which are formed in a semiconductor substrate and a p-type MISFET including a gate insulating film formed on the p-type active region and a first gate electrode including a first electrode formation film of which upper part has a concentration of La higher than the other part thereof. The semiconductor device further includes an n-type MISFET including a gate insulating film formed on the n-type active region and a second gate electrode including a second electrode formation film of which upper part has a concentration of Al higher than the other part thereof.
|
申请公布号 |
US2008197421(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20070896164 |
申请日期 |
2007.08.30 |
申请人 |
MITSUHASHI RIICHIRO;SINGANAMALLA RAGHUNATH |
发明人 |
MITSUHASHI RIICHIRO;SINGANAMALLA RAGHUNATH |
分类号 |
H01L29/94;H01L21/336 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|