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发明名称
Herstellungsverfahren für CMOS-Halbleiter-Bauelemente mit wählbaren Gatedicken
摘要
申请公布号
DE60134753(D1)
申请公布日期
2008.08.21
申请号
DE20016034753
申请日期
2001.11.26
申请人
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW
发明人
JURCZAK, MALGORZATA;AUGENDRE, EMMANUEL;ROOYACKERS, RITA;BADENES, GONCAL
分类号
H01L21/28;H01L21/3213;H01L21/3215;H01L21/8238;H01L27/092
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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