发明名称 METHOD AND STRUCTURE FOR MANUFACTURING POROUS LOW-PERMITTIVITY LAYER, INTERCONNECTION PROCESSING METHOD, AND INTERCONNECTION STRUCTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of forming a porous low-permittivity layer. <P>SOLUTION: A CVD process is introduced to a substrate to which a frame precursor and a porogen precursor are supplied. In the supply stop period of the frame precursor, the value of at least one deposition parameter which is negatively correlated with the density of a product of the CVD process decreases. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008193038(A) 申请公布日期 2008.08.21
申请号 JP20070099820 申请日期 2007.04.05
申请人 UNITED MICROELECTRONICS CORP 发明人 CHEN MEI-LING;LAI KUO-CHIH;SUNG SU-JEN;HUANG CHEN-CHUNG;LAI YU-TSUNG
分类号 H01L21/768;C23C16/40;C23C16/455;H01L21/316;H01L23/522 主分类号 H01L21/768
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