发明名称 |
METHOD AND STRUCTURE FOR MANUFACTURING POROUS LOW-PERMITTIVITY LAYER, INTERCONNECTION PROCESSING METHOD, AND INTERCONNECTION STRUCTURE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a porous low-permittivity layer. <P>SOLUTION: A CVD process is introduced to a substrate to which a frame precursor and a porogen precursor are supplied. In the supply stop period of the frame precursor, the value of at least one deposition parameter which is negatively correlated with the density of a product of the CVD process decreases. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008193038(A) |
申请公布日期 |
2008.08.21 |
申请号 |
JP20070099820 |
申请日期 |
2007.04.05 |
申请人 |
UNITED MICROELECTRONICS CORP |
发明人 |
CHEN MEI-LING;LAI KUO-CHIH;SUNG SU-JEN;HUANG CHEN-CHUNG;LAI YU-TSUNG |
分类号 |
H01L21/768;C23C16/40;C23C16/455;H01L21/316;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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