| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film capacitor in which V<SB>BD</SB>can be raised while suppressing variation in capacity and thereby the device characteristics and the reliability of product can be enhanced. <P>SOLUTION: Each electronic component 1-4 has a capacitor 11 formed on a smooth substrate 51 having a planarization layer 52 formed on the surface as a base material. The capacitor 11 has such a structure as a lower conductor 21 consisting of an underlying conductor 21a and a conductor 21b, a dielectric film 31 composed of alumina, a resin layer J1 principally composed of novolak based resin, a resin layer J2 principally composed of polyimide based resin, and an upper conductor 25 consisting of an underlying conductor 25a and a conductor 25b are formed on the planarization layer 52 of the substrate 51. The resin layer J1 has an opening K1 above the lower conductor 21 and the resin layer J2 has an opening K2 larger than the opening K1. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
