| 摘要 |
<p>Disclosed is a semiconductor light-emitting diode which comprises a laminate wherein an n-type cladding layer, a light-emitting layer having a quantum well structure including a well layer and a barrier layer, an intermediate layer and a p-type cladding layer are sequentially arranged in this order. This semiconductor light-emitting diode is characterized in that each layer has a composition represented by the following formula: (Al<SUB>X</SUB>Ga<SUB>1-X</SUB>)<SUB>Y</SUB>In<SUB>1-Y</SUB>P (wherein 0 = X = 1, 0 < Y = 1), and the barrier layer has a composition represented by the following formula: (Al<SUB>X</SUB>Ga<SUB>1-X</SUB>)<SUB>Y</SUB>In<SUB>1-Y</SUB>P (wherein 0.5 < X = 1, 0 < Y = 1).</p> |
