发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique to form a Sn-Bi alloy plated film having a desired composition on the surface of a material to be plated while suppressing the production cost in an electroplating step for forming the Sn-Bi alloy plated film. <P>SOLUTION: An insulating sheet 33 to prevent the direct contact of a metal solid Sn 32 charged into a metallic case 30 with the metallic case 30 is provided between the metallic solid Sn 32 and the metallic case 30. Further, an inert block 34 is arranged in the metallic case 30 and a plurality of the metallic solids Sn 32 are arranged on the inert block 34 through the insulating sheet 33 (and an anode blade 31) and the metallic case 30 is arranged in an anode back 35. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008190005(A) 申请公布日期 2008.08.21
申请号 JP20070026472 申请日期 2007.02.06
申请人 RENESAS TECHNOLOGY CORP 发明人 FUKUHARA TAKAHISA
分类号 C25D17/12;C25D7/12;C25D17/10;H01L23/50 主分类号 C25D17/12
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