MANUFACTURING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nonvolatile memory device in which charge diffusion to a side of a charge trapping film is prevented. SOLUTION: A tunnel insulating film 102, a charge trapping film 104, a blocking film 106 and an electrically conductive film 108 are formed in sequence on a substrate 100 having a channel region. A word line structure 124 is formed by patterning the electrically conductive film 108, and a blocking film pattern 126 and a charge trapping film pattern 128 are formed by etching the blocking film 106 and the charge trapping film 104 respectively using an acidic solution as an etchant. COPYRIGHT: (C)2008,JPO&INPIT