| 摘要 |
PROBLEM TO BE SOLVED: To prevent gate leak failure in an SiC semiconductor device of an MOS structure. SOLUTION: An interlayer insulating film 9 has a double-layer structure of first and second insulating layers 9a, 9b. According to this structure, even if a crack occurs on the first insulating film 9a, metals for forming a source electrode 10 each can be prevented from permeating the crack because the crack can be covered by the second insulating film 9b formed so as to cover the first insulating film 9a. In this way, in a vertical power MOSFET as the SiC semiconductor device of the MOS structure, gate leak failure can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
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