| 摘要 |
In a non-volatile electric memory system a card-like memory unit ( 10 ) and a read/write unit ( 11 ) are provided as physically separate units. The memory unit ( 10 ) is based on a memory material ( 4 ) that can be set to at least two distinct physical states by applying an electric field across the memory material. The read/write unit ( 10 ) comprises contact means ( 9 ) provided in a determined geometrical pattern enabling a definition of memory cells in memory unit ( 10 ) in an initial write operation, the memory cells being located in a geometrical pattern corresponding to that of the contact means ( 9 ). Establishing a physical contact between the memory unit ( 10 ) and the read/write unit ( 11 ) closes an electrical circuit over an addressed memory cell such that read, write or erase operations can be effected. The memory material ( 4 ) of the memory unit ( 10 ) can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
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