发明名称 |
Structured resist layer manufacturing method for structuring e.g. reticle mask substrate, involves lithographically exposing resist layer covered with inorganic layer, and structuring resist layer by etching to form structured layer |
摘要 |
<p>The method involves forming an inorganic layer (5) on a resist layer (4), and selecting thickness of the inorganic layer and a material of the layer in such a manner that the inorganic layer is permeable to electromagnetic beams, which is used for exposure to the resist layer. The resist layer is lithographically exposed, where the resist layer is covered with the inorganic layer. The resist layer is structured by etching, so that a structured resist layer is formed.</p> |
申请公布号 |
DE102007016321(B3) |
申请公布日期 |
2008.08.21 |
申请号 |
DE20071016321 |
申请日期 |
2007.04.04 |
申请人 |
QIMONDA AG;ALTIS SEMICONDUCTOR, SNC |
发明人 |
SCHMID, GUENTER;SEBALD, MICHAEL;RABERG, WOLFGANG;KLOSTERMANN, ULRICH |
分类号 |
H01L21/311;G03F7/11;G03F7/16;G03F7/20;H01L21/312;H01L21/316 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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