摘要 |
<p>A thin beam directional crystallization system configured to process a substrate comprises a laser configured to produce laser light, the laser configured to have a high energy mode and a low energy mode. The high energy mode is configured to produce light energy sufficient to completely melt a substrate coated with amorphous silicon film, while the low energy mode is configured to produce light energy that is not sufficient to completely melt a substrate coated with amorphous silicon film. The system further comprises beam shaping optics coupled to the laser and configured to convert the laser light emitted from the laser into a long thin beam with a short axis and a long axis, a stage configured to support the substrate and film, and a translator coupled with the stage, the translator configured to advance the substrate and film so as to produce a step size in conjunction with the firing of the laser.</p> |
申请人 |
TCZ PTE. LTD.;TURK, BRANDON, A.;KNOWLES, DAVID, S. |
发明人 |
TURK, BRANDON, A.;KNOWLES, DAVID, S. |