| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which allows a structure formed of a low-melting material to be used, enables a space where the structure is sealed to turn into high vacuum, and avoids film formation of a sealing member on the structure. SOLUTION: According to the semiconductor device manufacturing method, the movable structure 3 formed on a semiconductor substrate 1 is covered with a sacrifice film which is then covered with a silicon dioxide film 5, and a through hole is formed in the silicon dioxide film 5. Then the sacrifice film is removed via the through hole to secure a space between the movable structure 3 and the silicon dioxide film 5, and the through hole is sealed by forming by sputtering a film of aluminum or aluminum alloy, having high fluidity on the silicon dioxide film 5. COPYRIGHT: (C)2008,JPO&INPIT
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