| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a Cu wiring or a Cu plug having small resistance and high reliability. SOLUTION: A groove portion 10 is formed on an interlayer insulating film 4 formed on a substrate, a barrier/seed film 6 is formed on an interlayer insulating film 3 including the inner wall of the groove portion 10, and a copper 7 is embedded in the groove portion 10 by an electrolytic method, with the barrier/seed film 6 used as an electrode. The barrier/seed film 6 is a single-layer film made of a metal oxide or a metal nitride, having a high melting point and having the characteristics of an insulator or a semiconductor and includes a low-resistance metal other than the copper, in the film. COPYRIGHT: (C)2008,JPO&INPIT
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