发明名称 Conductive structure for a semiconductor integrated circuit and method for forming the same
摘要 A conductive structure for a semiconductor integrated circuit and method for forming the conductive structure are provided. The semiconductor integrated circuit has a pad and a passivation layer partially overlapping the pad to define the first lateral size of the first opening. The conductive structure electrically connects to the pad via the first opening. The conductive structure overlaps the first opening portion and parts of the passivation layer to provide a lower conductive resistance for the pad when connecting to a bump. Meanwhile, the conductive structure provides no discontinuity over the passivation layer in other places, thereby providing a stable conduction.
申请公布号 US2008197490(A1) 申请公布日期 2008.08.21
申请号 US20070898613 申请日期 2007.09.13
申请人 CHIPMOS TECHNOLOGIES INC. 发明人 CHYI J. B.
分类号 H01L23/48;H01L21/44 主分类号 H01L23/48
代理机构 代理人
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