WIDE-BANDGAP SEMICONDUCTOR DEVICES

摘要

A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210 . The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.