| 摘要 |
The present invention discloses a method of forming a metal wire in a semiconductor device and comprises the steps of forming a first insulating layer, a conductive layer and a capping layer on a semiconductor substrate, forming hard mask patterns on the capping layer, etching the capping layer and the conductive layer through an etching process utilizing the hard mask patterns to form metal wires, removing the hard mask patterns and forming a second insulating layer on the semiconductor substrate including the metal wires to insulate the metal wires from each other.
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