发明名称 |
Conductive structure for a semiconductor integrated circuit and method for forming the same |
摘要 |
A conductive structure for a semiconductor integrated circuit and method for forming the conductive structure are provided. The semiconductor integrated circuit has a pad and a passivation layer partially covering the pad to define a first opening portion having a first lateral size. The conductive structure electrically connects to the pad via the first opening portion. The conductive structure comprises a support layer defining a second opening portion. A conductor is formed in the second opening portion to serve as a bump having a planar top surface.
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申请公布号 |
US2008197467(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20070898612 |
申请日期 |
2007.09.13 |
申请人 |
CHIPMOS TECHNOLOGIES INC. |
发明人 |
CHYI J.B.;HUANG CHENG TANG |
分类号 |
H01L23/495;H01L21/44 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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