发明名称 Conductive structure for a semiconductor integrated circuit and method for forming the same
摘要 A conductive structure for a semiconductor integrated circuit and method for forming the conductive structure are provided. The semiconductor integrated circuit has a pad and a passivation layer partially covering the pad to define a first opening portion having a first lateral size. The conductive structure electrically connects to the pad via the first opening portion. The conductive structure comprises a support layer defining a second opening portion. A conductor is formed in the second opening portion to serve as a bump having a planar top surface.
申请公布号 US2008197467(A1) 申请公布日期 2008.08.21
申请号 US20070898612 申请日期 2007.09.13
申请人 CHIPMOS TECHNOLOGIES INC. 发明人 CHYI J.B.;HUANG CHENG TANG
分类号 H01L23/495;H01L21/44 主分类号 H01L23/495
代理机构 代理人
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