| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a hafnium amide complex suitable as a film-forming raw material in production of semiconductors. SOLUTION: The hafnium amide complex containing a zirconium component and represented by formula: Hf[N(R<SB>1</SB>)(R<SB>2</SB>)]<SB>4</SB>(wherein, R<SB>1</SB>and R<SB>2</SB>represent each a methyl group or an ethyl group) is produced. In the process, a compound represented by formula: A(O<SB>y</SB>XO<SB>n</SB>R<SB>f</SB>)<SB>m</SB>(wherein, A represents a hydrogen atom, an oxygen atom or a hafnium atom; X represents a carbon atom or a sulfur atom; m and n represent each 1 or 2; y represents 1 or 0; and R<SB>f</SB>represents a 1-12C alkyl group, a 1-12C perfluoroalkyl group, a 6-12C aryl group or a 4-12C heteroaryl group) and containing a carbonyl group or a sulfonyl group is added to carry out vacuum distillation. A lithium alkyl amide represented by formula: Li(NR<SB>3</SB>R<SB>4</SB>) (wherein, R<SB>3</SB>and R<SB>4</SB>represent each a methyl group or an ethyl group) is further added to the resultant distillate to conduct the vacuum distillation. COPYRIGHT: (C)2008,JPO&INPIT
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