| 摘要 |
A semiconductor memory device has bit lines, capacitors, bit contacts and capacitor contacts, wherein the bit lines are provided over a semiconductor substrate, the bit lines are connected to the semiconductor substrate through the bit contacts, the capacitors are connected to the semiconductor substrate through the capacitor contacts, and wherein in two adjacent bit lines, pitch d 2 (first pitch) representing a pitch of portions provided with the capacitor contacts is larger than pitch d 3 (second pitch) representing a pitch of portions provided with the bit contacts, and distance d 4 between two such bit lines in the portions provided with the bit contacts is larger than width d 5 of the bit lines in the portions provided with the bit contacts.
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