发明名称 |
EPITAXIAL SUBSTRATE FOR FIELD EFFECT TRANSISTOR |
摘要 |
<p>Provided is an epitaxial substrate for a field effect transistor. In the epitaxial substrate, a nitride-based group 3-5 semiconductor epitaxial crystal, containing Ga, is arranged between a base substrate and an operation layer, and the nitride-based group 3-5 semiconductor epitaxial crystal contains the following layers (i, ii, iii); (i) a first buffer layer which contains Ga or Al and a high resistance crystal layer added with a compensating impurity element of the same period as Ga on the periodic table and has a small atomic number, (ii) a second buffer layer, which is stacked on the operation layer side of the first buffer layer and contains Ga or Al, and (iii) a high-purity epitaxial crystal layer, which is arranged between the high resistance crystal layer and the operation layer, and has no additive or contains an acceptor impurity of such a small quantity as to maintain the depletion state.</p> |
申请公布号 |
WO2008099949(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
WO2008JP52602 |
申请日期 |
2008.02.12 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;HATA, MASAHIKO;SAZAWA, HIROYUKI;NISHIKAWA, NAOHIRO |
发明人 |
HATA, MASAHIKO;SAZAWA, HIROYUKI;NISHIKAWA, NAOHIRO |
分类号 |
H01L21/205;H01L21/338;H01L29/207;H01L29/778;H01L29/812 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|