ETCHING APPARATUS, ETCHING METHOD, AND METHOD FOR PRODUCTION OF ELECTRONIC DEVICE

摘要

Disclosed is an etching apparatus comprising a load room into which a substrate is to be inserted and an RIE unit for conducting the reactive ion etching of the substrate. The RIE unit has a processing chamber whose inner wall is covered with an Al<SUB>2</SUB>O<SUB>3</SUB> film produced by the anodic oxidation in an non-aqueous solution. The substrate may be pre-treated by irradiating the substrate with ultraviolet ray having a wavelength of 120 to 190 nm by using a radiation apparatus in a gas atmosphere containing no oxygen atom or water molecule and then heating the substrate at a temperature equal to or higher than 170°C. The apparatus enables to improve the selectivity in the etching treatment.