DOUBLE GATE TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND ACTIVE MATRIX SUBSTRATE COMPRISING DOUBLE GATE TRANSISTOR

摘要

Disclosed is a method for manufacturing a double gate transistor (100), which comprises a step for forming a bottom gate electrode (110), a step for forming a first gate insulating film (120) covering the bottom gate electrode (110), a step for forming a semiconductor layer facing the bottom gate electrode (110) through the first gate insulating film (120), a step for obtaining a crystalline semiconductor layer (130) by irradiating the semiconductor layer with a laser beam, a step for forming a second gate insulating film (140) covering the crystalline semiconductor layer (130), and a step for forming a top gate electrode (150) facing the crystalline semiconductor layer (130) through the second gate insulating film (140). The bottom gate electrode (110) has a surface composed of a conductive metal oxide.