SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND COMPLEMENTARY TRANSISTOR CIRCUIT DEVICE

摘要

Disclosed is a semiconductor device comprising a semiconductor (1), a first electrode (2), an insulating layer (3) formed between the semiconductor (1) and the first electrode (2), a second electrode (4) which is in contact with the semiconductor (1) while being apart from the first electrode (2), and a third electrode (5) which is in contact with the semiconductor (1) while being apart from the first electrode (2) and the second electrode (4). The semiconductor (1) comprises an organic semiconductor layer (10) and an oxide semiconductor layer (11).