摘要 |
<p>A semiconductor device provided with a pad having improved moisture resistance. The semiconductor device includes a circuit section including a plurality of semiconductor elements formed on a semiconductor substrate; an insulating stacked layer which covers the circuit section and is formed on the semiconductor substrate; a multilayer wiring structure which is formed in the insulating stacked layer and includes a wiring pattern and a via conductor; and a pad electrode structure which is formed above the semiconductor substrate and connected to the multilayer wiring structure. The pad electrode structure includes a plurality of layers of pad wiring patterns, and pad via conductors for connecting the pad wiring patterns. At least the pad wiring pattern on the topmost layer includes a dot pattern and a seal pattern surrounding the outer side of the dot pattern in loop-shape, and at least one of other pad wiring patterns has a continuous enlarged dot pattern having a size that corresponds to the seal pattern. The pad via conductor includes a plurality of columnar via conductors arranged corresponding to the pad pattern, and a loop-shaped wall section arranged corresponding to the seal pattern.</p> |