发明名称 SEMICONDUCTOR DEVICE
摘要 <p>A semiconductor device provided with a pad having improved moisture resistance. The semiconductor device includes a circuit section including a plurality of semiconductor elements formed on a semiconductor substrate; an insulating stacked layer which covers the circuit section and is formed on the semiconductor substrate; a multilayer wiring structure which is formed in the insulating stacked layer and includes a wiring pattern and a via conductor; and a pad electrode structure which is formed above the semiconductor substrate and connected to the multilayer wiring structure. The pad electrode structure includes a plurality of layers of pad wiring patterns, and pad via conductors for connecting the pad wiring patterns. At least the pad wiring pattern on the topmost layer includes a dot pattern and a seal pattern surrounding the outer side of the dot pattern in loop-shape, and at least one of other pad wiring patterns has a continuous enlarged dot pattern having a size that corresponds to the seal pattern. The pad via conductor includes a plurality of columnar via conductors arranged corresponding to the pad pattern, and a loop-shaped wall section arranged corresponding to the seal pattern.</p>
申请公布号 KR20080077287(A) 申请公布日期 2008.08.21
申请号 KR20087017279 申请日期 2005.12.27
申请人 FUJITSU LIMITED 发明人 NAGAI KOUICHI
分类号 H01L21/3205;H01L23/52;H01L27/105 主分类号 H01L21/3205
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